Disilicide solid solutions, phase diagram, and resistivities. II. TaSi/sub 2/-WSi/sub 2/

Journal Article · Sun Mar 15 00:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337981· OSTI ID:6884319

Gas, P; Tardy, J; LeGoues, F K; d'Heurle, F M

The preparation of TaSi/sub 2/-WSi/sub 2/ alloys from the reaction of Si with Ta-W films allows one to explore the constitution diagram of the TaSi/sub 2/-WSi/sub 2/ pseudobinary system. The structure of the alloys has been investigated by means of Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. The ''equilibrium'' phase diagrams for the system TaSi/sub 2/-WSi/sub 2/ and for TiSi/sub 2/-WSi/sub 2/ are compared in light of simple ideas of alloy theory based on the consideration of the electron to atom ratios. The resistivity of the alloys is analyzed in terms of what has been established about the transport properties of the disilicides and of possible contributions of structural defects, mostly stacking faults, to scattering processes.

• Research Organization: IBM Research Laboratory, P. O. Box 218, Yorktown Heights, New York 10598
• OSTI ID: 6884319
• Journal Information: J. Appl. Phys.; (United States), Vol. 61:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
TANTALUM SILICIDES
ELECTRIC CONDUCTIVITY
PHASE DIAGRAMS
TUNGSTEN SILICIDES
CRYSTAL-PHASE TRANSFORMATIONS
ALLOYS
BACKSCATTERING
CRYSTAL DEFECTS
ELECTRON MICROSCOPY
FABRICATION
PHASE TRANSFORMATIONS
SILICON ALLOYS
SOLID SOLUTIONS
THIN FILMS
TUNGSTEN ALLOYS
CRYSTAL STRUCTURE
DIAGRAMS
DISPERSIONS
ELECTRICAL PROPERTIES
FILMS
MICROSCOPY
MIXTURES
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
SCATTERING
SILICIDES
SILICON COMPOUNDS
SOLUTIONS
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
360104* - Metals & Alloys- Physical Properties
360102 - Metals & Alloys- Structure & Phase Studies