Modifications of Fowler-Nordheim injection characteristics in {gamma} irradiated MOS devices

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.685212· OSTI ID:644133

Scarpa, A; Paccagnella, A; Montera, F; Candelori, A ^[1]; Ghibaudo, G; Pananakakis, G ^[2]; Ghidini, G ^[3]; Fuochi, P G ^[4]

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1. Univ. di Padova (Italy). Dipt. di Elettronica e Informatica
2. LPCS/ENSERG, Grenoble (France)
3. SGS-THOMSON Microelectronics, Agrate Brianza (Italy)
4. CNR-FRAE, Bologna (Italy)

In this work the authors have investigated how gamma irradiation affects the tunneling conduction mechanism of a 20 nm thick oxide in MOS capacitors. The radiation induced positive charge is rapidly compensated by the injected electrons, and does not impact the gate current under positive injection after the first current-voltage measurement. Only a transient stress induced leakage current at low gate bias is observed. Instead, a radiation induced negative charge has been observed near the polysilicon gate, which enhances the gate voltage needed for Fowler-Nordheim conduction at negative gate bias. No time decay of this charge has been observed. Such charges slightly modify the trapping kinetics of negative charge during subsequent electrical stresses performed at constant current condition.

• OSTI ID: 644133
• Report Number(s): CONF-970934-; ISSN 0018-9499; TRN: 98:008066
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt3; Conference: RADECS 97: radiations and their effects on devices and systems conference, Cannes (France), 15-19 Sep 1997; Other Information: PBD: Jun 1998
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
SEMICONDUCTOR DEVICES
CAPACITORS
PHYSICAL RADIATION EFFECTS
GAMMA RADIATION
ELECTRICAL PROPERTIES
FOWLER-NORDHEIM THEORY