MOS structures based on epitaxial HgCdTe layers

Journal Article · Thu Aug 01 00:00:00 EDT 1985 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6163707

Antonov, V V; Belashov, Y G; Kazak, E P; Mezentseva, M P; Voitsekhovskii, A V

The authors present the results of a study of the dependence of the surface photoelectromotive force at wavelengths of 3.39 and 10.6 micrometers on the field electrode for MOS structures prepared from epitaxial Hg /SUB 1-x/ Cd /SUB x/ Te layers (x=0.20-0.25). They analyze the nature of the inhomogeneities in the region near the surface of semiconducting samples prepared under various heat treatment conditions and present their findings in a series of three charts.

• Research Organization: V.D. Kuznetsov Siberian Physicotechnical Institute
• OSTI ID: 6163707
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 21:3; Other Information: Translated from Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, Vol. 21, No. 3, pp. 393-396, March, 1985
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CADMIUM TELLURIDES
ELECTROMOTIVE FORCE
EPITAXY
MERCURY TELLURIDES
PHOTOELECTRIC EFFECT
FABRICATION
ELECTRODES
HEAT TREATMENTS
HETEROGENEOUS EFFECTS
MOS SOLAR CELLS
SAMPLE PREPARATION
WAVELENGTHS
CADMIUM COMPOUNDS
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
EQUIPMENT
MERCURY COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TELLURIDES
TELLURIUM COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture
360603 - Materials- Properties