Semiconductor laser device

Patent · Tue Jul 07 00:00:00 EDT 1981

OSTI ID:5878956

Namizaki, H; Susaki, W; Takamiya, S; Tanaka, T

A first N-AlGaAs and a second N-GaAs layer are successively grown on an I-GaAs substrate. A third N-AlGaAs, a fourth P-AlGaAs and a fifth N-GaAs layer superpose one another on the second layer except for one lateral portion. Those portions of the five layers remote from the exposed second layer portion are changed into a P+ type and surrounded by a P zone. A positive and a negative electrode are located on the fifth layer and the exposed second layer portion, respectively. The negative electrode is nearest to a laser region located in the second layer and can be secured to a heat sink.

• Assignee: Mitsubishi Denki K K (Japan)
• Patent Number(s): US 4277759
• OSTI ID: 5878956
• Resource Relation: Patent Priority Date: Priority date 10 Jul 1978, Japan
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
ALUMINIUM ARSENIDES
AMMONIUM HYDROXIDES
ELECTRIC CONDUCTIVITY
ELECTRODES
GALLIUM ARSENIDES
HEAT SINKS
HYDROFLUORIC ACID
HYDROGEN PEROXIDE
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
SILICON
SUBSTRATES
ZINC
ALUMINIUM COMPOUNDS
AMMONIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
HYDROGEN COMPOUNDS
HYDROXIDES
INORGANIC ACIDS
LASERS
MATERIALS
METALS
OXYGEN COMPOUNDS
PEROXIDES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SINKS
420300* - Engineering- Lasers- (-1989)