Effects of heat treatment on the 0.8 eV photoluminescence emission in GaAs grown by molecular beam epitaxy at low temperatures
- Wright State Univ., Dayton, OH (United States)
- Wright Lab., Wright-Patterson Air Force Base, OH (United States)
We report 0.8 eV photoluminescence (PL) emission of GaAs grown at low temperatures between 325 and 400{degrees}C by molecular beam epitaxy. Effects of heat treatments of the 0.8 eV emission are compared with those of the 1.467 eV sharp bound exciton lines. This allows us to attribute the 0.8 eV emission to the As{sub i}-V{sub Ga} center. We discuss the assigning of the As{sub i}-V{sub Ga} center to the well-known EL6. The PL intensity variation of 0.68 eV EL2 and 0.8 eV As{sub i}-V{sub Ga} seen in substrate materials is explained in terms of dislocation-mediated As{sub i}-V{sub Ga} transformation to EL2 whereas the PL intensity variation of 0.8 eV As{sub i}-V{sub Ga} for molecular beam epitaxy layers can be attributed to the growth condition. 21 refs., 4 figs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 535220
- Journal Information:
- Journal of Electronic Materials, Vol. 22, Issue 12; Other Information: PBD: Dec 1993
- Country of Publication:
- United States
- Language:
- English
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