Characterization of the visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:527731

Estes, M J ^[1]; Hirsch, L R; Wichart, S; Moddel, G ^[2]

---

1. Wright Lab., Wright-Patterson AFB, OH (United States). Avionics Directorate
2. Univ. of Colorado, Boulder, CO (United States)

The authors report on the influence of doping, temperature, porosity, and bandgap on the visible photoluminescence properties of anodically-etched porous a-Si:H and a-Si:C:H thin films. Only boron-doped, p-type a-Si:H or a-Si:C:H samples exhibited any visible photoluminescence. The authors see evidence of discrete defect or impurity levels in temperature-dependent luminescence measurements. Unlike in porous crystalline silicon, they see no correlation of luminescence energy with porosity. The authors do, though, observe a correlation of luminescence energy with bandgap of the starting a-Si:C:H films. They discuss the implication of these observations on the nature of the luminescence mechanism.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States); Department of the Air Force, Washington, DC (United States)
• OSTI ID: 527731
• Report Number(s): CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%159
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
PHOTOLUMINESCENCE
SILICON
SILICON CARBIDES
POROUS MATERIALS
BORON ADDITIONS
PHOSPHORUS ADDITIONS
TEMPERATURE DEPENDENCE
ETCHING
EXPERIMENTAL DATA