UV-irradiation and thermal-annealing studies in amorphous hydrogenated boron nitride thin films
- Departments of Physics and Chemistry and the Center for Molecular Electronics, University of Missouri--St. Louis, St. Louis, Missouri 63121 (United States)
Both photoproduction and photobleaching of dangling bonds by uv irradiation and thermal annealing were observed by electron spin resonance (ESR) in amorphous hydrogenated boron nitride. A model involving long-range hydrogen diffusion and hydrogen evolution is proposed to account for the ESR spectral line shapes observed after uv irradiation and thermal annealing. A Gaussian distribution of activation energies for the long-range hydrogen diffusion was used to explain the observed decrease in spin susceptibility after thermal annealing. A best fit to the spin susceptibility data gave an average activation energy of 0.0475 eV and a half-width of this Gaussian distribution of 0.027 eV. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 526984
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 56, Issue 3; Other Information: PBD: Jul 1997
- Country of Publication:
- United States
- Language:
- English
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