Structure and properties of WSi/sub 2/ thin films for MOS devices

Technical Report · Tue Jun 01 00:00:00 EDT 1982

OSTI ID:5036392

Wu, L K

Polycrystalline silicone has long been used as the gate and interconnection material in metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuits, but as the device dimensions are shrinking and circuits are growing larger, the relatively poor conductivity of poly-Si is limiting its performance. As an alternative, tungsten silicide on poly-Si is being considered. No research has yet been reported on the microstructure-properties of this system. In the present research, therefore, the annealing behaviors of coevaporated WSi/sub 2/ on p-doped poly-Si have been studied by x-ray diffraction, He/sup +/ - backscattering, transmission electron microscopy (TEM), and Auger/SIMS analysis. High temperature annealing of silicide results in crystallization of what appears to be amorphous layers of tungsten silicide as well as diffusion of phosphorous out of the poly-Si. An attempt is made to correlate the physical and chemical properties with device fabrication and performance.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5036392
• Report Number(s): LBL-14621; ON: DE82020293
• Resource Relation: Other Information: Thesis
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ELECTRONIC CIRCUITS
MOS TRANSISTORS
TUNGSTEN SILICIDES
CRYSTAL STRUCTURE
ANNEALING
RECRYSTALLIZATION
HEAT TREATMENTS
SEMICONDUCTOR DEVICES
SILICIDES
SILICON COMPOUNDS
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies
420800 - Engineering- Electronic Circuits & Devices- (-1989)