A highly manufacturable 0.2 {mu}m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

Conference · Sun Dec 31 00:00:00 EST 1995

OSTI ID:405389

Havasy, C K; Quach, T K; Bozada, C A ^[1]

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1. and others

This work is the development of a single-layer integrated-metal field effect transistor (SLIMFET) process for a high performance 0.2 {mu}m AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT). This process is compatible with MMIC fabrication and minimizes process variations, cycle time, and cost. This process uses non-alloyed ohmic contacts, a selective gate-recess etching process, and a single gate/source/drain metal deposition step to form both Schottky and ohmic contacts at the same time.

• OSTI ID: 405389
• Report Number(s): CONF-951097-; TRN: 96:004544-0027
• Resource Relation: Conference: IEEE gallium arsenide integrated circuits symposium: integrated circuits in GaAs, InP, and other compound semiconductors, San Diego, CA (United States), 29 Oct - 1 Nov 1995; Other Information: PBD: 1995; Related Information: Is Part Of GaAs IC symposium. Technical digest 1995; PB: 349 p.
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
GALLIUM ARSENIDES
MANUFACTURING
ALUMINIUM ARSENIDES
INDIUM ARSENIDES
FIELD EFFECT TRANSISTORS
ETCHING
PHYSICAL VAPOR DEPOSITION