Measurement of lateral dopant diffusion in rapid thermal annealed W-polycide gate structures
- Bell Labs., Murray Hill, NJ (United States). Lucent Technologies
- Bell Labs., Breinigsville, PA (United States). Lucent Technologies
Lateral dopant diffusion is a well known problem in dual-gate W-polycide CMOS devices. The authors have recently demonstrated that RTA processing helps to alleviate this problem and at the same time ensures sufficient dopant activation. However, due to the complex micro-structural changes in both poly-Si and WSi{sub x} (x {approximately} 2.5) layers during the RTA process, the time dependence of the diffusion processes and dopant distribution are difficult to predict. Consequently, the process optimization and device simulations are rather unreliable. They describe a new experimental technique to measure lateral dopant diffusion and 2-dimensional dopant distribution in RTA processed W-polycide structures using conventional SIMS analysis of lithographically defined test structures. The experiments show that the technique is capable of measuring lateral dopant diffusion over distances between one and tens of microns without losing the vertical resolution of conventional SIMS profiling. The technique can be used to study diffusion processes in a variety of materials and multi-layer structures.
- OSTI ID:
- 400664
- Report Number(s):
- CONF-960401-; ISBN 1-55899-332-0; TRN: IM9650%%69
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Rapid thermal and integrated processing 5; Gelpey, J.C. [ed.] [AST Elektronik USA, Inc., Lynnfield, MA (United States)]; Oeztuerk, M.C. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Thakur, R.P.S. [ed.] [Micron Technology, Inc., Boise, ID (United States)]; Fiory, A.T. [ed.] [Bell Labs., Murray Hill, NJ (United States). Lucent Technology]; Roozeboom, F. [ed.] [Philips Research, Eindhoven (Netherlands)]; PB: 400 p.; Materials Research Society symposium proceedings, Volume 429
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR MATERIALS
ANNEALING
MICROSTRUCTURE
SILICON
SILICON OXIDES
TUNGSTEN SILICIDES
SEMICONDUCTOR DEVICES
MANUFACTURING
PHOSPHORUS ADDITIONS
BORON ADDITIONS
ARSENIC ADDITIONS
NITROGEN ADDITIONS
DOPED MATERIALS
CHEMICAL VAPOR DEPOSITION
SPUTTERING
DIFFUSION
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
EXPERIMENTAL DATA