First observations of enhanced low dose rate sensitivity (ELDRS) in space: One part of the MPTB experiment
- Naval Surface Warfare Center, Crane, IN (United States)
- Mission Research Corp., Albuquerque, NM (United States)
- Naval Research Lab., Washington, DC (United States)
- RLP Research, Albuquerque, NM (United States)
Bipolar devices, most notably circuits fabricated with lateral PNP transistors (LPNP) and substrate PNP transistors (SPNP), have been observed to exhibit an enhanced low dose rate sensitivity when exposed to ionizing radiation. These dose rate sensitive bipolar devices exhibited enhanced degradation of base current in transistors and of input bias current, offset current, and/or offset voltage in linear circuits at dose rates greater than 1 rd(Si)/s. The total dose responses of several bipolar transistors and linear circuits in a space environment are demonstrated to exhibit enhanced degradation comparable, in magnitude, to ground-based data irradiated at a dose rate of 10 mrd(Si)/s indicating that enhanced low dose rate sensitivities (ELDRS) do indeed exist in space.
- OSTI ID:
- 323946
- Report Number(s):
- CONF-980705-; ISSN 0018-9499; TRN: 99:004466
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
- Country of Publication:
- United States
- Language:
- English
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