Determination of the mechanical properties of polysilicon thin films using bulge testing

Book · Thu Dec 31 00:00:00 EST 1998

OSTI ID:305565

Jayaraman, S; Edwards, R L; Hemker, K J ^[1]

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1. Johns Hopkins Univ., Baltimore, MD (United States)

Using standard deposition and micromachining techniques, silicon substrates with square and rectangular windows covered with membranes of polycrystalline silicon (polysilicon) have been fabricated. Pressure-displacement curves obtained during the bulge testing of membranes with the above geometries have been used to determine the elastic constants E and {nu} of the polysilicon. The results obtained (E = 162 {+-} 4 GPa and {nu} = 0.19 {+-} 0.03) are in good agreement with literature values for bulk polycrystalline silicon.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 305565
• Report Number(s): CONF-971201-; TRN: IM9906%%245
• Resource Relation: Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Thin-films -- Stresses and mechanical properties 7; Cammarata, R.C. [ed.] [Naval Research Lab., Washington, DC (United States)]; Nastasi, M. [ed.] [Los Alamos National Lab., NM (United States)]; Busso, E.P. [ed.] [Univ. of London (United Kingdom). Imperial Coll.]; Oliver, W.C. [ed.] [Nano Instruments, Inc., Oak Ridge, TN (United States)]; PB: 663 p.; Materials Research Society symposium proceedings, Volume 505
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SILICON
POLYCRYSTALS
ELASTICITY
EXPERIMENTAL DATA
YOUNG MODULUS
POISSON RATIO
RESIDUAL STRESSES