Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer

Journal Article · Wed Jun 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4955001· OSTI ID:22611493

Wang, Xing; Liu, Hongxia; Fei, Chenxi; Zhao, Lu; Chen, Shupeng; Wang, Shulong ^[1]

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1. Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071 (China)

A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

• OSTI ID: 22611493
• Journal Information: AIP Advances, Vol. 6, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CAPACITORS
CHANNELING
DIFFUSION
ELECTRICAL PROPERTIES
INTERFACES
LANTHANUM OXIDES
LAYERS
LEAKAGE CURRENT
SILICON
SUBSTRATES
THICKNESS
TRANSMISSION
TRANSMISSION ELECTRON MICROSCOPY
TRAPS