Band alignment and interfacial structure of ZnO/Si heterojunction with Al{sub 2}O{sub 3} and HfO{sub 2} as interlayers

Journal Article · Mon Apr 21 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4872175· OSTI ID:22262575

Lu, Hong-Liang; Yang, Ming; Xie, Zhang-Yi; Geng, Yang; Zhang, Yuan; Wang, Peng-Fei; Sun, Qing-Qing; Ding, Shi-Jin; Wei Zhang, David ^[1]

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1. State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433 (China)

Energy band alignment of ZnO/Si heterojunction with thin interlayers Al{sub 2}O{sub 3} and HfO{sub 2} grown by atomic layer deposition has been studied using x-ray photoelectron spectroscopy. The valence band offsets of ZnO/Al{sub 2}O{sub 3} and ZnO/HfO{sub 2} heterojunctions have been determined to be 0.43 and 0.22 eV, respectively. Accordingly, the band alignment ZnO/Si heterojunction is then modified to be 0.34 and 0.50 eV through inserting a thin Al{sub 2}O{sub 3} and HfO{sub 2} layer, respectively. The feasibility to tune the band structure of ZnO/Si heterojunction by selecting a proper interlayer shows great advantage in improving the performance of the ZnO-based optoelectronic devices.

• OSTI ID: 22262575
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
HAFNIUM OXIDES
HETEROJUNCTIONS
LAYERS
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES