Resistive memory switching in ultrathin TiO{sub 2} films grown by atomic layer deposition

Journal Article · Mon May 23 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4948104· OSTI ID:22608831

Misra, P.; Ajimsha, R. S.; Das, A. K.; Joshi, M. P.; Kukreja, L. M. ^[1]

---

1. Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

Electric field controlled forming free and unipolar resistive memory switching was observed in Au/TiO{sub 2}/Pt devices containing ultrathin TiO{sub 2} films of thickness ~ 4 nm grown by atomic layer deposition. These devices showed a large resistance ratio of ~ 10{sup 3} between high and low resistance states along with appreciable time retention for ~ 10{sup 4} seconds and endurance. The spread of reset and set voltages was from ~ 0.4-0.6 V and 1.1-1.5 V respectively with a clear window between them. The resistive switching mechanism was explained based on conductive filamentary model.

• OSTI ID: 22608831
• Journal Information: AIP Conference Proceedings, Vol. 1731, Issue 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
FILMS
GOLD
LAYERS
MEMORY DEVICES
PLATINUM
RETENTION
THICKNESS
TITANIUM OXIDES