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Title: Influence of Ce doping on optical and dielectric properties of TiO{sub 2}

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4946364· OSTI ID:22606432
; ;  [1]
  1. Centre of Excellence in Materials Science (Nanomaterials), Department of Applied Physics, Z.H. College of Engg. & Technology, Aligarh Muslim University, Aligarh 202002 (India)

Rare earth ion (Ce) doped TiO{sub 2} and pure TiO{sub 2} nanostructured were prepared by sol gel acid modified technique and calcinated at 450°C. Microstructural studies and thermal analysis were carried by XRD and TGA respectively. The results of structural characterization show the formation of all samples in single phase without any impurity. Optical properties were studied by UV- visible spectroscopy and band gap energy was estimated 3.04 eV and 3.14 eV for pure and Ce doped TiO{sub 2} respectively. Room temperature dielectric constant (ε’) decreases abruptly at lower frequencies owing to the charge transport relaxation. The observed behavior of the dielectric properties can be attributed on the basis of Koop’s theory based on Maxwell-Wagner’s two layer model in studied nanoparticles.

OSTI ID:
22606432
Journal Information:
AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English