Self-limiting and complete oxidation of silicon nanostructures produced by laser ablation in water

Journal Article · Thu Jul 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4957219· OSTI ID:22597860

Vaccaro, L.; Messina, F.; Camarda, P.; Gelardi, F. M.; Popescu, R.; Schneider, R.; Gerthsen, D. ^[1]

---

1. Laboratory for Electron Microscopy, Karlsruhe Institute of Technology, Engesserstrasse 7, 76131 Karlsruhe (Germany)

Oxidized Silicon nanomaterials produced by 1064 nm pulsed laser ablation in deionized water are investigated. High-resolution transmission electron microscopy coupled with energy dispersive X-ray spectroscopy allows to characterize the structural and chemical properties at a sub-nanometric scale. This analysis clarifies that laser ablation induces both self-limiting and complete oxidation processes which produce polycrystalline Si surrounded by a layer of SiO{sub 2} and amorphous fully oxidized SiO{sub 2}, respectively. These nanostructures exhibit a composite luminescence spectrum which is investigated by time-resolved spectroscopy with a tunable laser excitation. The origin of the observed luminescence bands agrees with the two structural typologies: Si nanocrystals emit a μs-decaying red band; defects of SiO{sub 2} give rise to a ns-decaying UV band and two overlapping blue bands with lifetime in the ns and ms timescale.

• OSTI ID: 22597860
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABLATION
CHEMICAL PROPERTIES
DEFECTS
EXCITATION
LASERS
LAYERS
LUMINESCENCE
NANOMATERIALS
NANOSTRUCTURES
OXIDATION
POLYCRYSTALS
SILICA
SILICON
SILICON OXIDES
TIME RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY
WATER
X RADIATION
X-RAY SPECTROSCOPY