The microwave Hall effect measured using a waveguide tee
- Department of Physics, University of Maryland, College Park, Maryland 20742 (United States)
- Laboratory for Physical Sciences, College Park, Maryland 20740 (United States)
This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sample or the use of a resonant cavity. Our method consists of placing the semiconductor wafer into a slot cut in an X-band (8–12 GHz) waveguide series tee, injecting microwave power into the two opposite arms of the tee, and measuring the microwave output at the third arm. A magnetic field applied perpendicular to the wafer gives a microwave Hall signal that is linear in the magnetic field and which reverses phase when the magnetic field is reversed. The microwave Hall signal is proportional to the semiconductor mobility, which we compare for calibration purposes with d.c. mobility measurements obtained using the van der Pauw method. We obtain the resistivity by measuring the microwave reflection coefficient of the sample. This paper presents data for silicon and germanium samples doped with boron or phosphorus. The measured mobilities ranged from 270 to 3000 cm{sup 2}/(V s).
- OSTI ID:
- 22596883
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARMS
BORON
CALIBRATION
COMPARATIVE EVALUATIONS
DOPED MATERIALS
GERMANIUM
GHZ RANGE 01-100
HALL EFFECT
MAGNETIC FIELDS
MICROWAVE RADIATION
MOBILITY
PHOSPHORUS
REFLECTION
SEMICONDUCTOR MATERIALS
SIGNALS
SILICON
WAVEGUIDES