Two-dimensional electron gas in GaAs/SrHfO{sub 3} heterostructure
- Department of Physics, China University of Mining and Technology, Xuzhou 221116 (China)
The III-V/perovskite-oxide system can potentially create new material properties and new device applications by combining the rich properties of perovskite-oxides together with the superior optical and electronic properties of III-Vs. The structural and electronic properties of the surface and interface are studied using first-principles calculations for the GaAs/SrHfO{sub 3} heterostructure. We investigate the specific adsorption sites and the atomic structure at the initial growth stage of GaAs on the SrHfO{sub 3} (001) substrate. Ga and As adsorption atoms preferentially adsorb at the top sites of oxygen atoms under different coverage. The energetically favorable interfaces are presented among the atomic arrangements of the GaAs/SrHfO{sub 3} interfaces. Our calculations predict the existing of the two-dimensional electron gas in the GaAs/SrHfO{sub 3} heterostructure.
- OSTI ID:
- 22596819
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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