Structural properties of Ge on SrTiO{sub 3} (001) surface and Ge/SrTiO{sub 3} interface

Journal Article · Sat Mar 14 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4915088· OSTI ID:22399275

Pu, Long; Wang, Jianli; Tang, Gang; Zhang, Junting ^[1]

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1. Department of Physics, China University of Mining and Technology, Xuzhou 221116 (China)

Germanium−perovskite oxide heterostructures have a strong potential for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. We investigated the atomic structure and electronic properties of Ge on perfect and defective (001) SrTiO{sub 3} by first-principle calculations. The specific adsorption sites at the initial growth stage and the atomic structure of Ge on the SrTiO{sub 3} (001) substrate have been systematically investigated. The surface grand potential was calculated and compared as a function of the relative chemical potential. The complete surface phase diagram was presented. The energetically favorable interfaces were pointed out among the atomic arrangements of the Ge/SrTiO{sub 3} (001) interfaces. The atomic structure and electronic properties of the intrinsic point defects were calculated and analyzed for the Ge/SrTiO{sub 3} (001) interfaces.

• OSTI ID: 22399275
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ADSORPTION
COMPARATIVE EVALUATIONS
ELECTRIC POTENTIAL
ELECTRONIC STRUCTURE
GERMANIUM
INTERFACES
MOSFET
PHASE DIAGRAMS
POINT DEFECTS
POTENTIALS
SEMICONDUCTOR MATERIALS
STRONTIUM TITANATES
SUBSTRATES
SURFACES