Leakage and field emission in side-gate graphene field effect transistors
- Physics Department “E.R. Caianiello,” University of Salerno, via G. Paolo II, 84084 Fisciano (Italy)
- CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy)
- Physics Department, University of Exeter, Stocker Road 6, Exeter, Devon EX4 4QL (United Kingdom)
- Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio, 67100 Coppito, L'Aquila (Italy)
We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.
- OSTI ID:
- 22590613
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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