High power, 1060-nm diode laser with an asymmetric hetero-waveguide
Journal Article
·
· Quantum Electronics (Woodbury, N.Y.)
- National Key Lab. On High Power Diode Laser,Changchun University of Science and Technology,Changchun, 130033 (China)
- College of Physics, Jilin University, Changchun, 130021 (China)
By introducing an asymmetric hetero-waveguide into the epitaxial structure of a diode laser, a 6.21-W output is achieved at a wavelength of 1060 nm. A different design in p- and n-confinement, based on optimisation of energy bands, is used to reduce voltage loss and meet the requirement of high power and high wall-plug efficiency. A 1060-nm diode laser with a single quantum well and asymmetric hetero-structure waveguide is fabricated and analysed. Measurement results show that the asymmetric hetero-structure waveguide can be efficiently used for reducing voltage loss and improving the confinement of injection carriers and wall-plug efficiency. (lasers)
- OSTI ID:
- 22551214
- Journal Information:
- Quantum Electronics (Woodbury, N.Y.), Vol. 45, Issue 7; Other Information: Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7818
- Country of Publication:
- United States
- Language:
- English
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