The temperature dependence of internal optical losses in semiconductor lasers ({lambda} = 900-920 nm)

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610100210· OSTI ID:21562197

Pikhtin, N A; Shashkin, I S ^[1]; Ladugin, M A; Marmalyuk, A A ^[2]; Podoskin, A A; Tarasov, I S ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. POLYUS Research and Development Institute (Russian Federation)

The temperature dependences of radiative characteristics of semiconductor lasers based on asymmetric heterostructures of the separate confinement with an extended waveguide fabricated by MOCVD epitaxy (the emission wavelength {lambda} = 900-920 nm) are studied. It is established that the threshold concentration in the active region and waveguide layers of the laser heterostructure of the separate confinement increases in the CW lasing mode as the pumping current and temperature of the active region are increased. It is established experimentally that, in the temperature range of 20-140 deg. C, the stimulated quantum yield remains unchanged. It is shown that the temperature delocalization of charge carriers leads to an increase in the carrier concentration in the waveguide layers of the laser heterostructure. The total increase in internal optical losses due to scattering by free charge carriers in the layers of the active region and waveguide layers of the laser heterostructure leads to a decrease in the differential quantum efficiency and to saturation of the watt-ampere characteristic of semiconductor lasers in the continuous lasing mode.

• OSTI ID: 21562197
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 10 Vol. 44; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONFINEMENT
CRYSTAL GROWTH METHODS
DEPOSITION
EFFICIENCY
EMISSION
EPITAXY
LASERS
LAYERS
QUANTUM EFFICIENCY
SATURATION
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
WAVEGUIDES
WAVELENGTHS