Electronic structure of antimonene grown on Sb{sub 2}Te{sub 3} (111) and Bi{sub 2}Te{sub 3} substrates
- Institute of High Energy of Physics, Chinese Academy of Sciences, Beijing 100049 (China)
- Department of Physics, Xiamen University, Xiamen 361995, Fujian (China)
We explore the formation of single bilayer Sb(111) ultrathin film (Antimonene) on Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} substrates for the first time, which is theoretically predicated to be a robust trivial semiconductor but can be tuned to a 2D TI by reducing the buckling height. From angle-resolved photoemission spectroscopy measurements, the antimonene can be well grown on the two surfaces and shows clear band dispersion. The electronic structure of the antimonene shows similar character on the two surfaces, but due to the interfacial strain effect, the bands of antimonene on Bi{sub 2}Te{sub 3} are flatter than on Sb{sub 2}Te{sub 3}, which attributes to Bi{sub 2}Te{sub 3} substrate lattice constants lager than Sb{sub 2}Te{sub 3}. At the same time, the charge transfer effect is also observed through core level shift, which influences the band dispersion simultaneously.
- OSTI ID:
- 22494869
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 1; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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