Highly enhanced and temporally stable field emission from MWCNTs grown on aluminum coated silicon substrate
- Nanostech Laboratory, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016 (India)
In this work, a detailed field emission study of multi-walled carbon nanotubes (MWCNTs) grown on Si and Al coated Si substrates is reported. Morphological and microstructural studies of the films show higher entanglement of CNTs in the case of CNT/Si film as compared to CNT/Al/Si film. Raman studies show that the defect mediated peak (D) is substantially suppressed as compared to graphitic peak (G) resulting in significant reduction in I{sub D}/I{sub G} value in CNT/Al/Si film. Field emission (FE) current density of CNT/Al/Si film (∼25 mA/cm{sup 2}) is significantly higher as compared to that of CNT/Si film (∼1.6 mA/cm{sup 2}). A substantial improvement in temporal stability is also observed in CNT/Al/Si film. This enhancement in field emission current is attributed to strong adhesion between substrate and CNTs, low work function, high local field enhancement factor at the CNT tips and less entanglement of CNTs grown on Al/Si. The temporally stable CNT/Al/Si cold cathode can be a potential candidate to replace conventional electron sources in prototype devices.
- OSTI ID:
- 22493928
- Journal Information:
- AIP Advances, Vol. 5, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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