Substrate bias induced synthesis of flowered-like bunched carbon nanotube directly on bulk nickel

Journal Article · Mon Feb 15 00:00:00 EST 2016 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2015.10.011· OSTI ID:22581418

Bisht, Atul ^[1]; Chockalingam, S. ^[1]; Kesarwani, A. K. ^[1]; Singh, B. P. ^[2]; Singh, V. N. ^[3]

---

1. Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)
2. Physics and Engineering of Carbon Materials, Division of Materials Physics and Engineering, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)
3. Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

Highlights: • Flowered-like bunched MWCNTs have been synthesized by MW PECVD technique. • Effect of substrate bias on the properties of MWCNT has been studied. • Minimum E{sub T} = 1.9 V/μm with β = 4770 has been obtained in the film deposited at −350 V. - Abstract: This paper reports the effect of substrate bias on the multiwalled carbon nanotube (MWCNT) deposited on nickel foil by microwave plasma enhanced chemical vapor deposition technique. The MWCNTs have been characterized by the scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, field emission and current–voltage characteristic of the heterojunction diode. The SEM images exhibit unique hierarchical flowered-like bunched and conformally coated MWCNTs. Substrate bias induced ion bombardment helps in the enhancement of hydrocarbon dissociation and is responsible for flowered-like MWCNTs growth. The HRTEM micrographs show the base growth mechanism for MWCNTs. The value of turn on field for emission decreases from 5.5 to 1.9 V/μm and field enhancement factor increases from 927 to 4770, respectively, with the increase of substrate bias. The diode ideality factor of CNT/ n-Si heterojunction is evaluated as 2.4 and the on/off current ratio is found to be 7 at ±2 V, respectively.

• OSTI ID: 22581418
• Journal Information: Materials Research Bulletin, Vol. 74; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON NANOTUBES
CHEMICAL VAPOR DEPOSITION
DISSOCIATION
ELECTRIC CONDUCTIVITY
FIELD EMISSION
HETEROJUNCTIONS
HYDROCARBONS
ION BEAMS
MICROWAVE RADIATION
NICKEL
PLASMA
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SYNTHESIS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY