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Title: Detection of a MoSe{sub 2} secondary phase layer in CZTSe by spectroscopic ellipsometry

We demonstrate the application of Spectroscopic Ellipsometry (SE) for identification of secondary phase MoSe{sub 2} in polycrystalline Cu{sub 2}ZnSnSe{sub 4} (CZTSe) samples. A MoSe{sub 2} reference sample was analyzed, and its optical constants (ε{sub 1} and ε{sub 2}) were extracted by SE analysis. This dataset was implemented into an optical model for analyzing SE data from a glass/Mo/CZTSe sample containing MoSe{sub 2} at the back side of the absorber. We present results on the n and k values of CZTSe and show the extraction of the thickness of the secondary phase MoSe{sub 2} layer. Raman spectroscopy and scanning electron microscopy were applied to confirm the SE results.
Authors:
; ;  [1] ; ; ; ; ;  [2]
  1. Laboratory for Chalcogenide Photovoltaics, Energy and Semiconductor Research Laboratory, University of Oldenburg, Oldenburg (Germany)
  2. Laboratory for Photovoltaics, University of Luxembourg, Belvaux (Luxembourg)
Publication Date:
OSTI Identifier:
22492922
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DATASETS; DETECTION; ELLIPSOMETRY; GLASS; LAYERS; MOLYBDENUM SELENIDES; OPTICAL MODELS; POLYCRYSTALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THICKNESS