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Title: Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.
Authors:
;  [1] ; ; ;  [2] ;  [3] ; ; ;  [4]
  1. Nanotechnology Application Centre, University of Allahabad, Allahabad 211 002 (India)
  2. Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, D-04318 Leipzig (Germany)
  3. Institut für Physik, Universität Augsburg, D-86135 Augsburg (Germany)
  4. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
Publication Date:
OSTI Identifier:
22492776
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 13; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; ANNEALING; GERMANIUM IONS; LAYERS; MASS SPECTROSCOPY; NANOSTRUCTURES; RAMAN EFFECT; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON OXIDES; SUBSTRATES; TIME-OF-FLIGHT METHOD; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION