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Title: Multi-band terahertz active device with complementary metamaterial

We describe a multi-band terahertz-active device using a composite structure made of complementary metamaterial and doped silicon that can be dynamically controlled. This special complementary metamaterial exhibits three resonances that produce three pass-bands. The pass-bands can be uniformly manipulated by exploiting the photoinduced characteristics of the doped silicon. Simulations were performed to analyze the magnetic field and surface current distributions. The simulation results agree well with experimental results obtained from terahertz time-domain spectroscopy. Using an 808-nm-wavelength laser beam, a modulation depth of up to 80% was obtained. In numerical simulations, we used a conductivity mode to characterize photoinduction. The development of multi-band terahertz-active devices has many potential applications, for example, in filters, modulators, switches, and sensors.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Terahertz Science Cooperative Innovation Center, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  2. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
Publication Date:
OSTI Identifier:
22492709
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BEAMS; COMPUTERIZED SIMULATION; CURRENTS; DEPTH; DISTRIBUTION; DOPED MATERIALS; FILTERS; LASERS; MAGNETIC FIELDS; MODULATION; RESONANCE; SENSORS; SILICON; SPECTROSCOPY; SURFACES; SWITCHES; WAVELENGTHS