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Title: Growth and characterization of In{sub X}Ga{sub 1-X}N/GaN single quantum well prepared by MOCVD

The InGaN/GaN SQW structures were grown on c-plane sapphire substrate using metal-organic chemical vapor deposition (MOCVD). The thickness and indium composition of the InGaN was determined by HRXRD. From simulation fit the composition of indium was found to be 10% and thickness was around 5nm and 10nm. The Photoluminescence emission was found to be shifited towards lower wavelength as 479nm, 440nm on increasing the thickness. The photoluminescence intensity was degrades with increases of InGaN thickness. Atomic force microscopy studies were also carried out and the results are discussed in detail.
Authors:
; ; ; ; ;  [1]
  1. Crystal Growth Centre, Anna University, Chennai – 600025 (India)
Publication Date:
OSTI Identifier:
22490540
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1665; Journal Issue: 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; EMISSION SPECTRA; EMISSION SPECTROSCOPY; GALLIUM NITRIDES; INDIUM COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WELLS; SAPPHIRE; SUBSTRATES; THICKNESS; WAVELENGTHS