Growth and characterization of In{sub X}Ga{sub 1-X}N/GaN single quantum well prepared by MOCVD
Journal Article
·
· AIP Conference Proceedings
The InGaN/GaN SQW structures were grown on c-plane sapphire substrate using metal-organic chemical vapor deposition (MOCVD). The thickness and indium composition of the InGaN was determined by HRXRD. From simulation fit the composition of indium was found to be 10% and thickness was around 5nm and 10nm. The Photoluminescence emission was found to be shifited towards lower wavelength as 479nm, 440nm on increasing the thickness. The photoluminescence intensity was degrades with increases of InGaN thickness. Atomic force microscopy studies were also carried out and the results are discussed in detail.
- OSTI ID:
- 22490540
- Journal Information:
- AIP Conference Proceedings, Vol. 1665, Issue 1; Conference: 59. DAE solid state physics symposium 2014, Tamilnadu (India), 16-20 Dec 2014; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
Effect of Al-mole fraction in Al{sub x}Ga{sub 1−x}N grown by MOCVD
Journal Article
·
Wed Jan 07 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22490540
+1 more
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
Journal Article
·
Fri Mar 07 00:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22490540
+2 more
Effect of Al-mole fraction in Al{sub x}Ga{sub 1−x}N grown by MOCVD
Journal Article
·
Thu Apr 24 00:00:00 EDT 2014
· AIP Conference Proceedings
·
OSTI ID:22490540
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EMISSION SPECTRA
EMISSION SPECTROSCOPY
GALLIUM NITRIDES
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
SAPPHIRE
SUBSTRATES
THICKNESS
WAVELENGTHS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EMISSION SPECTRA
EMISSION SPECTROSCOPY
GALLIUM NITRIDES
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
SAPPHIRE
SUBSTRATES
THICKNESS
WAVELENGTHS