In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy

Journal Article · Fri Mar 07 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4867640· OSTI ID:22277942

Ju, Guangxu; Honda, Yoshio ^[1]; Tabuchi, Masao ^[2]; Takeda, Yoshikazu ^[3]; Amano, Hiroshi ^[1]

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1. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603 (Japan)
2. Synchrotron Radiation Research Centre, Nagoya University, Nagoya, Aichi 464-8603 (Japan)
3. Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto, Aichi 489-0965 (Japan)

The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the In{sub x}Ga{sub 1-x}N with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra.

• OSTI ID: 22277942
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
CRYSTALS
DIFFUSION BARRIERS
GALLIUM NITRIDES
INDIUM
INDIUM COMPOUNDS
INTERFACES
LAYERS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM WELLS
REFLECTIVITY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
X-RAY SPECTRA