skip to main content

SciTech ConnectSciTech Connect

Title: Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)
  2. (Russian Federation)
  3. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080 (United States)
Publication Date:
OSTI Identifier:
22489079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CONTROL; FERMI LEVEL; GALLIUM ANTIMONIDES; INDIUM; LAYERS; OXIDATION; OXIDES; OXYGEN; PHOTOEMISSION; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; TRANSISTORS