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Title: AlGaAs converters and arrays for laser power beaming

This study reports on the development of AlGaAs/GaAs-based laser power photovoltaic (PV) converters fabricated by LPE. The monochromatic (λ = 809 nm) conversion efficiency up to 58% is measured for cells with p-n junction in Al{sub 0.07}Ga{sub 0.93}As and low (x = 0.25-0.3) Al concentration ‘window’. Modules, which have converters of low and high power laser radiation and the voltage of 4V, have been designed and fabricated. Comparison of output parameters measured at two different conditions (i.e., under flash lamp and laser beam) has been performed.
Authors:
; ; ; ; ; ;  [1]
  1. Ioffe Institute, 26 Polytechnicheskaya, St.Petersburg, 194021 (Russian Federation)
Publication Date:
OSTI Identifier:
22489020
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1679; Journal Issue: 1; Conference: CPV-11: 11. international conference on conventrator photovoltaictaic systems, Aix-les-Bains (France), 13-15 Apr 2015; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ALUMINIUM ARSENIDES; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DESIGN; EFFICIENCY; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; LASER POWER TRANSMISSION; LASER RADIATION; LIGHT BULBS; LIQUID PHASE EPITAXY; MONOCHROMATIC RADIATION; PHOTOVOLTAIC CONVERSION; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS