Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE
- Ioffe Institute (Russian Federation)
Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al{sub 0.07}GaAs–p-Al{sub 0.07}GaAs–p-Al{sub 0.25}GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) and partly nonuniform (laser beam) illumination distribution over the photoreceiving surface. In the former case, a monochromatic efficiency of η = 53.1% is achieved for samples with an area of S = 4 cm{sup 2} at a power of 1.2 W. At S = 10.2 mm{sup 2} the efficiency is 58.3% at a laser power of 0.7 W.
- OSTI ID:
- 22750039
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 52; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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