Carrier lifetimes and interface recombination velocities in CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructures with different Mg compositions grown by molecular beam epitaxy

Journal Article · Mon Jul 27 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4927757· OSTI ID:22486373

Liu, Shi; Lassise, Maxwell B.; Zhao, Yuan; Zhang, Yong-Hang ^[1]; Zhao, Xin-Hao; Campbell, Calli M. ^[1]

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1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)

The interface recombination velocities of CdTe/Mg{sub x}Cd{sub 1−x}Te double heterostructure (DH) samples with different CdTe layer thicknesses and Mg compositions are studied using time-resolved photoluminescence measurements. A lowest interface recombination velocity of 30 ± 10 cm/s has been measured for the CdTe/Mg{sub 0.46}Cd{sub 0.54}Te interface, and a longest carrier lifetime of 0.83 μs has been observed for the studied DHs. These values are very close to the best reported numbers for GaAs/AlGaAs DHs. The impact of carrier escape through thermionic emission over the MgCdTe barrier on the recombination process in the DHs is also studied.

• OSTI ID: 22486373
• Journal Information: Applied Physics Letters, Vol. 107, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM ARSENIDES
CADMIUM TELLURIDES
CARRIER LIFETIME
CARRIERS
GALLIUM ARSENIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
RECOMBINATION
THERMIONIC EMISSION
THICKNESS
TIME RESOLUTION