Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy

Journal Article · Mon Dec 22 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4904993· OSTI ID:22395580

Zhao, Xin-Hao; Campbell, Calli M. ^[1]; DiNezza, Michael J.; Liu, Shi; Zhao, Yuan; Zhang, Yong-Hang ^[1]

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1. Center for Photonics Innovation, Arizona State University, Tempe, Arizona 85287 (United States)

The bulk Shockley-Read-Hall carrier lifetime of CdTe and interface recombination velocity at the CdTe/Mg{sub 0.24}Cd{sub 0.76}Te heterointerface are estimated to be around 0.5 μs and (4.7 ± 0.4) × 10{sup 2 }cm/s, respectively, using time-resolved photoluminescence (PL) measurements. Four CdTe/MgCdTe double heterostructures (DHs) with varying CdTe layer thicknesses were grown on nearly lattice-matched InSb (001) substrates using molecular beam epitaxy. The longest lifetime of 179 ns is observed in the DH with a 2 μm thick CdTe layer. It is also shown that the photon recycling effect has a strong influence on the bulk radiative lifetime, and the reabsorption process affects the measured PL spectrum shape and intensity.

• OSTI ID: 22395580
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM TELLURIDES
CARRIER LIFETIME
CHARGE CARRIERS
EMISSION SPECTRA
HALL EFFECT
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INTERFACES
LAYERS
MAGNESIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PHOTONS
RECOMBINATION
SUBSTRATES
TIME RESOLUTION