skip to main content

Title: Suppression of low-frequency charge noise in gates-defined GaAs quantum dots

To reduce the charge noise of a modulation-doped GaAs/AlGaAs quantum dot, we have fabricated shallow-etched GaAs/AlGaAs quantum dots using the wet-etching method to study the effects of two-dimensional electron gas (2DEG) underneath the metallic gates. The low-frequency 1/f noise in the Coulomb blockade region of the shallow-etched quantum dot is compared with a non-etched quantum dot on the same wafer. The average values of the gate noise are approximately 0.5 μeV in the shallow-etched quantum dot and 3 μeV in the regular quantum dot. Our results show the quantum dot low-frequency charge noise can be suppressed by the removal of the 2DEG underneath the metallic gates, which provides an architecture for noise reduction.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Key Laboratory of Quantum Information, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, Anhui 230026 (China)
  2. (China)
Publication Date:
OSTI Identifier:
22486203
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM ARSENIDES; DOPED MATERIALS; GALLIUM ARSENIDES; MODULATION; NOISE; QUANTUM DOTS; TWO-DIMENSIONAL SYSTEMS