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Title: Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-like interface and near-interface traps.
Authors:
; ;  [1] ;  [2]
  1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road (Hong Kong)
  2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China)
Publication Date:
OSTI Identifier:
22486134
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 21; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ATOMS; CAPACITANCE; CAPACITORS; COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; FLUORINE; GALLIUM ARSENIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; METALS; OXIDES; PASSIVATION; PLASMA; SEMICONDUCTOR MATERIALS; SURFACES; TRAPS