Nitride passivation reduces interfacial traps in atomic-layer-deposited Al{sub 2}O{sub 3}/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891431· OSTI ID:22311171

Fukuhara, N.; Osada, T.; Sazawa, H.; Hata, M.; Inoue, T. ^[1]

---

1. Sumitomo Chemical Co., Ltd., IT-related Chemicals Research Laboratory, 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan)

Using an atmospheric metal-organic chemical vapor deposition system, we passivated GaAs with AlN prior to atomic layer deposition of Al{sub 2}O{sub 3}. This AlN passivation incorporated nitrogen at the Al{sub 2}O{sub 3}/GaAs interface, improving the capacitance-voltage (C–V) characteristics of the resultant metal-oxide-semiconductor capacitors (MOSCAPs). The C–V curves of these devices showed a remarkable reduction in the frequency dispersion of the accumulation capacitance. Using the conductance method at various temperatures, we extracted the interfacial density of states (D{sub it}). The D{sub it} was reduced over the entire GaAs band gap. In particular, these devices exhibited D{sub it} around the midgap of less than 4 × 10{sup 12} cm{sup −2}eV{sup −1}, showing that AlN passivation effectively reduced interfacial traps in the MOS structure.

• OSTI ID: 22311171
• Journal Information: Applied Physics Letters, Vol. 105, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
CAPACITANCE
CAPACITORS
CHEMICAL VAPOR DEPOSITION
DISPERSIONS
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
INTERFACES
LAYERS
METALS
ORGANOMETALLIC COMPOUNDS
PASSIVATION
REDUCTION
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TRAPS