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Title: Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

We show the operation of a Cu/Al{sub 2}O{sub 3}/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 ± 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ∼2 × 10{sup −13} A, an ON/OFF ratio of ∼10{sup 5}, and an equivalent subthreshold swing of ∼96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.
Authors:
; ; ; ; ;  [1] ; ;  [1] ;  [2]
  1. CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country (Spain)
  2. (Spain)
Publication Date:
OSTI Identifier:
22486017
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM OXIDES; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON SPECTROSCOPY; EQUIPMENT; FREEZING OUT; SEMICONDUCTOR MATERIALS; TRANSISTORS