Oxidation of ultrathin GaSe
- Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
- Department of Materials and Metallurgical Engineering, New Mexico Tech., Socorro, New Mexico 87801 (United States)
- Sandia National Laboratories, Livermore, California 94551 (United States)
Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga{sub 2}Se{sub 3} and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.
- OSTI ID:
- 22485972
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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