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Title: Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene

Abstract

Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E 2 1g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalablemore » synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.« less

Authors:
 [1];  [2];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Escuela Politecnica Nacional, Quito (Ecuador)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1214495
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 9; Journal Issue: 8; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; van der Waals epitaxy; heterostructures; GaSe; chemical vapor deposition; graphene

Citation Formats

Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., and Xiao, Kai. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. United States: N. p., 2015. Web. doi:10.1021/acsnano.5b01943.
Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., & Xiao, Kai. Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. United States. doi:10.1021/acsnano.5b01943.
Li, Xufan, Basile, Leonardo, Huang, Bing, Ma, Cheng, Lee, Jaekwang, Vlassiouk, Ivan V., Puretzky, Alexander A., Lin, Ming -Wei, Chi, Miaofang, Idrobo Tapia, Juan Carlos, Rouleau, Christopher M., Sumpter, Bobby G., Yoon, Mina, Geohegan, David B., and Xiao, Kai. Wed . "Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene". United States. doi:10.1021/acsnano.5b01943. https://www.osti.gov/servlets/purl/1214495.
@article{osti_1214495,
title = {Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene},
author = {Li, Xufan and Basile, Leonardo and Huang, Bing and Ma, Cheng and Lee, Jaekwang and Vlassiouk, Ivan V. and Puretzky, Alexander A. and Lin, Ming -Wei and Chi, Miaofang and Idrobo Tapia, Juan Carlos and Rouleau, Christopher M. and Sumpter, Bobby G. and Yoon, Mina and Geohegan, David B. and Xiao, Kai},
abstractNote = {Two-dimensional (2D) van der Waals (vdW) heterostructures are a family of artificially-structured materials that promise tunable optoelectronic properties for devices with enhanced functionalities. Compared to stamping, direct epitaxy of vdW heterostructures is ideal for clean interlayer interfaces and scalable device fabrication. Here, we explore the synthesis and preferred orientations of 2D GaSe atomic layers on graphene (Gr) by vdW epitaxy. Guided by the wrinkles on graphene, GaSe nuclei form that share a predominant lattice orientation. Due to vdW epitaxial growth many nuclei grow as perfectly aligned crystals and coalesce to form large (tens of microns), single-crystal flakes. Through theoretical investigations of interlayer energetics, and measurements of preferred orientations by atomic-resolution STEM and electron diffraction, a 10.9 interlayer rotation of the GaSe lattice with respect to the underlying graphene is found to be the most energetically preferred vdW heterostructure with the largest binding energy and the longest-range ordering. These GaSe/Gr vdW heterostructures exhibit an enhanced Raman E21g band of monolayer GaSe along with highly-quenched photoluminescence due to strong charge transfer. Despite the very large lattice mismatch of GaSe/Gr through vdW epitaxy, the predominant orientation control and convergent formation of large single-crystal flakes demonstrated here is promising for the scalable synthesis of large-area vdW heterostructures for the development of new optical and optoelectronic devices.},
doi = {10.1021/acsnano.5b01943},
journal = {ACS Nano},
issn = {1936-0851},
number = 8,
volume = 9,
place = {United States},
year = {2015},
month = {7}
}

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Works referencing / citing this record:

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors
journal, June 2019

  • Li, Henan; Huang, Jing‐Kai; Shi, Yumeng
  • Advanced Materials Interfaces, Vol. 6, Issue 24
  • DOI: 10.1002/admi.201900220

Chemical and structural stability of 2D layered materials
journal, July 2019


Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors
journal, June 2019

  • Li, Henan; Huang, Jing‐Kai; Shi, Yumeng
  • Advanced Materials Interfaces, Vol. 6, Issue 24
  • DOI: 10.1002/admi.201900220

Chemical and structural stability of 2D layered materials
journal, July 2019