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Title: Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films

Simultaneously achieving higher carriers concentration and mobility is a technical challenge against up-scaling the transparent-conductive performances of transparent-conductive oxides. Utilizing one order higher dense (∼1 × 10{sup 11} cm{sup −3}) plasmas (in comparison to the conventional direct current plasmas), highly c-axis oriented Al-doped ZnO films have been prepared with precise control over relative composition and chemical states of constituting elements. Tailoring of intrinsic (O vacancies) and extrinsic (ionic Al and zero-valent Al) dopants provide simultaneous enhancement in mobility and concentration of charge carriers. Room-temperature resistivity as low as 4.89 × 10{sup −4} Ω cm along the carrier concentration 5.6 × 10{sup 20} cm{sup −3} is obtained in 200 nm thick transparent films. Here, the control of atomic Al reduces the charge trapping at grain boundaries and subdues the effects of grain boundary scattering. A mechanism based on the correlation between electron-hole interaction and carrier mobility is proposed for degenerately doped wide band-gap semiconductors.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Center for Advance Plasma Surface Technology (CAPST), NU-SKKU Joint Institute for Plasma-Nano Materials (IPNM), School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-440746 (Korea, Republic of)
  2. (Thailand)
Publication Date:
OSTI Identifier:
22483064
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; CARRIER MOBILITY; CARRIERS; CHARGE CARRIERS; CHEMICAL STATE; CONTROL; DIRECT CURRENT; DOPED MATERIALS; GRAIN BOUNDARIES; PLASMA; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; VACANCIES; ZINC OXIDES