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Title: Roles of grain boundaries on the semiconductor to metal phase transition of VO{sub 2} thin films

Vanadium dioxide (VO{sub 2}) thin films with controlled grain sizes are deposited on amorphous glass substrates by pulsed laser deposition. The grain boundaries (GBs) are found as the dominating defects in the thin films. The semiconductor to metal transition (SMT) properties of VO{sub 2} thin films are characterized and correlated to the GB density. The VO{sub 2} films with lower GB density exhibit a sharper SMT with a larger transition amplitude. A high resolution TEM study at GB area reveals the disordered atomic structures along the boundaries and the distorted crystal lattices near the boundaries. The VO{sub 2} SMT amplitude and sharpness could be directly related to these defects at and near the boundaries.
Authors:
; ;  [1] ; ; ;  [2] ;  [1] ;  [3]
  1. Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843-3128 (United States)
  2. Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843-3128 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22482037
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CRYSTAL LATTICES; ENERGY BEAM DEPOSITION; GRAIN BOUNDARIES; GRAIN SIZE; LASER RADIATION; METALS; PHASE TRANSFORMATIONS; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; SUBSTRATES; THIN FILMS; TRANSITION AMPLITUDES; TRANSMISSION ELECTRON MICROSCOPY; VANADIUM OXIDES