Structural and electrophysical properties of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well

Journal Article · Fri May 15 00:00:00 EDT 2015 · Crystallography Reports

DOI:https://doi.org/10.1134/S1063774515030062· OSTI ID:22472323

Vasiliev, A. L. ^[1]; Vasil’evskii, I. S. ^[2]; Imamov, R. M.; Klimov, E. A.; Klochkov, A. N.; Lavruhin, D. V.; Maltsev, P. P.; Pushkarev, S. S. ^[3]; Trunkin, I. N. ^[4]

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1. Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
2. National Research Nuclear University “MEPhI” (Russian Federation)
3. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
4. National Research Centre “Kurchatov Institute” (Russian Federation)

A complex investigation of structural and electrical properties of In{sub 0.52}Al{sub 0.48}As/In{sub y}Ga{sub 1−y}As/In{sub 0.52}Al{sub 0.48}As nanoheterostructures on InP substrates containing thin InAs and GaAs inserts in a quantum well (QW) has been performed. The GaAs nanolayers are grown at the QW boundaries between InGaAs and InAlAs layers, while the double InAs inserts are grown in InGaAs layers symmetrically with respect to the QW center. The layer and interface structures have been studied by transmission electron microscopy. It is shown that, when using the proposed epitaxial growth conditions, the introduction of ∼1.2-nm-thick InAs nanoinserts into the InGaAs QW and a ∼1-nm-thick GaAs nanobarrier at the QW boundaries does not induce structural defects. The diffusion of the InAlAs/InGaAs interface (2–3 monolayers) and InAs/InGaAs nanoinsert interface (1–2 monolayers) has been estimated. Measured Hall mobilities and electron concentrations in structures with different combinations of InAs and GaAs inserts have been analyzed using calculated energy band diagrams and electron density distributions. It is found that the photoluminescence spectra of the structures under study have differences caused by specific structural features of coupled QWs (specifically, the change in the In molar fraction due to InAs inserts and the change in the QW thickness due to GaAs transition barriers.

• OSTI ID: 22472323
• Journal Information: Crystallography Reports, Vol. 60, Issue 3; Other Information: Copyright (c) 2015 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CONCENTRATION RATIO
DIFFUSION BARRIERS
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRONIC STRUCTURE
ELECTRONS
EPITAXY
GALLIUM ARSENIDES
HALL EFFECT
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INTERFACES
LAYERS
PHOTOLUMINESCENCE
QUANTUM WELLS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY