Electron transport in an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well with a {delta}-Si doped barrier in high electric fields

Journal Article · Thu Jul 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610070122· OSTI ID:21562259

Vasil'evskii, I S; Galiev, G B; Matveev, Yu A; Klimov, E A; Pozela, J ^[1]; Pozela, K; Suziedelis, A; Paskevic, C; Juciene, V ^[2]

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1. Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
2. Semiconductor Physics Institute (Lithuania)

The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW) with a {delta}-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers into the QW reduces the electron scattering rate from the polar optical and interface phonons localized in the QW and increases the electron mobility. It is found experimentally that the saturation of the conduction current in the In{sub 0.53}Ga{sub 0.47}As channel in strong electric fields is determined by not only the sublinear field dependence of the electron drift velocity, but also by the decrease in the electron concentration n{sub s} with an increase in the voltage across the channel. The dependence of n{sub s} on the applied voltage is due to the ionized-donor layer located within the {delta}-Si doped In{sub 0.52}Al{sub 0.48}As barrier and oriented parallel to the In{sub 0.53}Ga{sub 0.47}As QW.

• OSTI ID: 21562259
• Journal Information: Semiconductors, Vol. 44, Issue 7; Other Information: DOI: 10.1134/S1063782610070122; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON DRIFT
ELECTRON MOBILITY
ELECTRONS
INDIUM ARSENIDES
INTERFACES
LAYERS
PHONONS
QUANTUM WELLS
SATURATION
SCATTERING
TWO-DIMENSIONAL CALCULATIONS
VELOCITY
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTARY PARTICLES
FERMIONS
INDIUM COMPOUNDS
LEPTONS
MATERIALS
MOBILITY
NANOSTRUCTURES
PARTICLE MOBILITY
PNICTIDES
QUASI PARTICLES