Electron transport in an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well with a {delta}-Si doped barrier in high electric fields
- Russian Academy of Sciences, Institute of Microwave Semiconductor Electronics (Russian Federation)
- Semiconductor Physics Institute (Lithuania)
The electron conduction in a two-dimensional channel of an In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As quantum well (QW) with a {delta}-Si doped barrier has been investigated. It is shown that the introduction of thin InAs barriers into the QW reduces the electron scattering rate from the polar optical and interface phonons localized in the QW and increases the electron mobility. It is found experimentally that the saturation of the conduction current in the In{sub 0.53}Ga{sub 0.47}As channel in strong electric fields is determined by not only the sublinear field dependence of the electron drift velocity, but also by the decrease in the electron concentration n{sub s} with an increase in the voltage across the channel. The dependence of n{sub s} on the applied voltage is due to the ionized-donor layer located within the {delta}-Si doped In{sub 0.52}Al{sub 0.48}As barrier and oriented parallel to the In{sub 0.53}Ga{sub 0.47}As QW.
- OSTI ID:
- 21562259
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 44; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Mechanisms of negative resistivity and generation of terahertz radiation in a short-channel In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As transistor
Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors
X-ray analysis of multilayer In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures with InAs nanoinsert in quantum well
Journal Article
·
Fri May 15 00:00:00 EDT 2009
· Semiconductors
·
OSTI ID:21260362
Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors
Journal Article
·
Tue Dec 03 23:00:00 EST 2013
· AIP Conference Proceedings
·
OSTI ID:22261781
X-ray analysis of multilayer In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As HEMT heterostructures with InAs nanoinsert in quantum well
Journal Article
·
Mon May 15 00:00:00 EDT 2017
· Crystallography Reports
·
OSTI ID:22758379
Related Subjects
36 MATERIALS SCIENCE
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON DRIFT
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
LEPTONS
MATERIALS
MOBILITY
NANOSTRUCTURES
PARTICLE MOBILITY
PHONONS
PNICTIDES
QUANTUM WELLS
QUASI PARTICLES
SATURATION
SCATTERING
TWO-DIMENSIONAL CALCULATIONS
VELOCITY
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON DRIFT
ELECTRON MOBILITY
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INTERFACES
LAYERS
LEPTONS
MATERIALS
MOBILITY
NANOSTRUCTURES
PARTICLE MOBILITY
PHONONS
PNICTIDES
QUANTUM WELLS
QUASI PARTICLES
SATURATION
SCATTERING
TWO-DIMENSIONAL CALCULATIONS
VELOCITY