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Title: Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures

The exchange enhancement of the electron g factor in strained InGaAs/InP heterostructures with a two-dimensional electron gas is studied. Analysis of the temperature dependence of the resistance in the minima of the Shubnikov-de Haas oscillations in perpendicular magnetic fields up to 12 T in the vicinity of the odd filling factors of the Landau levels yields the values of the effective electron Lande factor g* from −8.6 to −10.1. The experimental values are compared with the results of theoretical calculations of the g factor of quasiparticles. The calculations are performed using an eight-band k · p Hamiltonian and take into account exchange interaction in the two-dimensional electron gas. It is shown that, under the conditions of a large overlap between the spin-split Landau levels, the maximum value of the quasiparticle g factor can be attained in the vicinity of even filling factors. This is caused by the nonparabolicity of the electron dispersion relation.
Authors:
; ; ; ;  [1] ; ;  [2]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Lobachevsky State University of Nizhni Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22470075
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 49; Journal Issue: 2; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPARATIVE EVALUATIONS; DISPERSION RELATIONS; ELECTRON GAS; ELECTRONS; EXCHANGE INTERACTIONS; GALLIUM ARSENIDES; HAMILTONIANS; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LANDE FACTOR; MAGNETIC FIELDS; OSCILLATIONS; QUASI PARTICLES; SPIN; STRAINS; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS