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Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas

Journal Article · · Semiconductors
; ; ;  [1]; ; ;  [2]
  1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
  2. Lobachevskyi State University, Physical-Technical Research Institute (Russian Federation)
Cyclotron resonance and magnetic transport in InP/InGaAs/InP heterostructures with axially symmetric quantum wells are studied experimentally at 4.2 K. An increase in the cyclotron mass at the Fermi level from 0.047m{sub 0} to 0.057m{sub 0} with an increase in the concentration of two-dimensional electrons from 5.5 Multiplication-Sign 10{sup 11} to 2.1 Multiplication-Sign 10{sup 12} cm{sup -3} is shown. The values of the Rashba spin splitting at the Fermi level are determined from Fourier analysis of the beats of Shubnikov-de Haas oscillations. The obtained experimental data are compared with the theoretical results of self-consistent calculations of the energy spectrum and cyclotron masses of 2D electrons performed using the eight-band k {center_dot} p Hamiltonian.
OSTI ID:
22210442
Journal Information:
Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 47; ISSN SMICES; ISSN 1063-7826
Country of Publication:
United States
Language:
English

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