Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Lobachevskyi State University, Physical-Technical Research Institute (Russian Federation)
Cyclotron resonance and magnetic transport in InP/InGaAs/InP heterostructures with axially symmetric quantum wells are studied experimentally at 4.2 K. An increase in the cyclotron mass at the Fermi level from 0.047m{sub 0} to 0.057m{sub 0} with an increase in the concentration of two-dimensional electrons from 5.5 Multiplication-Sign 10{sup 11} to 2.1 Multiplication-Sign 10{sup 12} cm{sup -3} is shown. The values of the Rashba spin splitting at the Fermi level are determined from Fourier analysis of the beats of Shubnikov-de Haas oscillations. The obtained experimental data are compared with the theoretical results of self-consistent calculations of the energy spectrum and cyclotron masses of 2D electrons performed using the eight-band k {center_dot} p Hamiltonian.
- OSTI ID:
- 22210442
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 11 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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