Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
- Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)
We report the observation, through Shubnikov-de Haas oscillations in the magnetoresistance, of spin splitting caused by the Rashba spin-orbit interaction in a strained Ge quantum well epitaxially grown on a standard Si(001) substrate. The Shubnikov-de Haas oscillations display a beating pattern due to the spin split Landau levels. The spin-orbit parameter and Rashba spin-splitting energy are found to be 1.0 × 10{sup −28 } eVm{sup 3} and 1.4 meV, respectively. This energy is comparable to 2D electron gases in III-V semiconductors, but substantially larger than in Si, and illustrates the suitability of Ge for modulated hole spin transport devices.
- OSTI ID:
- 22310704
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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