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Title: Fabrication of high-performance ultra-thin-body SnO{sub 2} thin-film transistors using microwave-irradiation post-deposition annealing

We report on the fabrication of high-performance ultra-thin-body (UTB) SnO{sub 2} thin-film transistors (TFTs) using microwave-irradiation post-deposition annealing (PDA) at a low process temperature (<100 °C). We confirm that the electrical characteristics of SnO{sub 2} TFTs become drastically enhanced below a body thickness of 10 nm. The microwave-annealed UTB SnO{sub 2} TFTs with a thickness of 5 nm exhibited increased optical transmittance, as well as remarkable transfer characteristics: a high mobility of 35.4 cm{sup 2} V{sup −1} s{sup −1}, a drain current on/off ratio of 4.5 × 10{sup 7}, a steep subthreshold gate voltage swing of 623 mV/dec, and a clear enhancement-mode behavior. Additionally, the microwave-annealed SnO{sub 2} TFTs exhibited a better positive gate-bias stress/negative gate-bias stress immunity than thermally annealed SnO{sub 2} TFTs. Therefore, the thickness of the UTB SnO{sub 2} TFTs, as well as the microwave-annealing process, are both shown to be essential for transparent and flexible display technology.
Authors:
; ;  [1]
  1. Department of Electronic Materials Engineering, Kwangwoon University, 20 Gwangun-ro, Nowon-gu, Seoul 139-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22415212
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEPOSITION; FABRICATION; MICROWAVE RADIATION; THIN FILMS; TIN OXIDES; TRANSISTORS